tak jsem trosku pohledal:

"IBM has developed the first transistor using strained silicon directly on insulator (SSDOI) technology that provides high performance while eliminating manufacturing problems. Also, IBM is the first to combine two different underlying silicon layers that simultaneously maximize the performance of the key transistors used in complementary metal oxide semiconductor (CMOS) devices"

cele je to zde: http://domino.research.ibm.com/comm/...0909_cmos.html

zatim to opravdu vypada ze SSDOI ma prispet spise k vyreseni jistych vyrobnich obtizi a vlastne slouzi jen jako priprava na 65nm vyrobni proces.
Shrnuto a podtrzeno SSDOI zvysuje mobilitu elektronu na prechodech
zitra zkusim este pohledat